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STM901-30
RF POWER MODULE LINEAR BASE STATION APPLICATIONS
.LI .860 .26 .I .P .GAI
NEAR POWER AMPLIFIER - 900 MHz VOLTS NPUT/OUTPUT 50 OHMS OU T = +44.7 dBm PEP N = 35 dB MIN.
CASE STYLEH141 ORDER CODE STM901-30 BRANDING STM901-30
PIN CONNECTION
DESCRIPTION The STM901-30 module is designed for digital cellular radio base station applications in the 860-900 MHz frequency range operating at 26V. The STM901-30 is designed to meet the low distortion, high linearity requirements of modern digital cellular base station equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C)
Symbol Parameter Value Unit 1. RF Input 5. VD 9. VB2 2. VG1 6. VB1 10. Cap2 3. deleted 4. VG2 7. Cap1 8. VC1 11. VC2 12. RF Output
V, VD , V C1 , VC2 DC Supply Voltage I Q1 I Q2 I Q3 I Q4 PI N P OU T T STG T OPE R Bias Current @ V = 26V, 1st Stage Bias Current @ V = 26V, 2nd Stage Bias Current @ V = 26V, 3rd Stage Bias Current @ V = 26V, 4th Stage RF Input Power RF Output Power (P OUT < 44.7 dBm PEP) (V = 26V)
28 0.40 0.40 0.54 1.62 14 48 - 30 to +100 - 30 to +100
Vdc Adc Adc Adc Adc dBm PEP dBm PEP C C
Storage Temperature Operating Temperature
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ELECTRICAL SPECIFICATIONS (Tcase = 25C, V D , V C1 , V C2 = 26V) (I DQ1 = 100mA, IDQ2 = 180mA, I CQ1 = 50mA, I C Q2 =150mA)
Symbol Parameter T est Cond itions Value Min. Typ. Max. Un it
BW GP dt * IMD* --
Frequency Range Power Gain Double-Tone Efficiency Input VSWR Intermodulation Distortion Load Mismatch POUT = +44.7 dBm PEP POUT = +44.7 dBm PEP POUT = +44.7 dBm PEP POUT = +44.7 dBm PEP V = 26Vdc VSWR = 5:1 POUT = +44.7 dBm PEP
860 35 27 -- --
-- 38 30 1.5:1 -33
900 -- -- 3:1 -26
MHz dB % dBT**
No Degradation in Output Power
Note:
* Two- Tone test; 20 KHz separation
** dBT - i n dB, refer enced to tone level (See Figure 1 below)
PEP (Peak Envelope Power) Carrier Level Total Avg. Power of Two Tone AVERAGE Power of Ea ch Tone
3 dB min 3 dB min
26 dB min
Max IMD in dBT
freq
20 kHz
Figure 1
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STM901-30
TYPICAL PERFORMANCE POWER GAIN vs OUTPUT POWER & FREQUENCY POWER GAIN vs PEP & FREQUENCY
POWER GAIN vs OUTPUT POWER & FREQUENCY
POWER GAIN vs PEP & FREQUENCY
42.5 f=860 MHz
f=900 MHz
41.5 POWER GAIN [dB]
f=925 MHz
40.5 39.5 38.5 f=960 MHz 37.5 36.5
Vs=26.0, Tc=25C Iq=0.1/0.18/0.1/0.15 A 35 40 PEP [dBm] 45
POWER GAIN vs OUTPUT POWER & FREQUENCY
POWER GAIN vs PEP & FREQUENCY
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TYPICAL PERFORMANCE 3rd ORDER IMD vs PEP 5th ORDER IMD vs PEP
3rd ORDER IMD vs PEP
5th ORDER IMD vs PEP
3rd ORDER IMD vs PEP
-20
5th ORDER IMD vs PEP
V s=26.0, Tc=+85C I q=0.1/0.18/0.05/0.15 A
-25 3rd IMD [dBT]
f=860 MHz
f=960 MHz f=925 M Hz
-30
-35
f=900 MHz
-40
20
25
30 PEP [dBm]
35
40
45
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TYPICAL PERFORMANCE CW EFFICIENCY vs OUTPUT POWER & FREQUENCY EFFICIENCY vs FREQUENCY
GAIN & RETURN LOSS vs FREQUENCY
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MODULE DC AND TEST FIXTURE CONFIGURATION
C1, C3, C5, C7, C11, C13, C 17 : 100 pF C2, C4, C6, C8, C12, C14, C 18 : .001 F C19 : .1 F C20, C22 : 100 F F1, F2, F3 : FAIR-RITE #2664000101 L1, L2, L3 : 5 Turns of 24 AWG Wi re, Inner Diameter 1.27mm R1, R2, R3, R4 : 20 KOHM
Setting Bias: (Ex.: IQ1 = .1A, IQ2 = .18A, IQ3 = .050A, IQ4 = .150A) 1. Set all variable resistors clockwise. (No bias current flows through transistors when all variable resistors are set clockwise.) 2. Record stationary current I O. 3. Adjust R1 for (IO + 100)mA. 4. Adjust R2 for (IO + 100 + 180)mA. 5. Adjust R3 for (IO + 100 + 180 + 50)mA. 6. Adjust R4 for (IO + 100 + 180 + 50 + 150)mA.
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APPLICATIONS RECOMMENDATIONS OPERATION LIMITS The STM901-30 power module should never be operated under any condition which exceeds the Absolute Maximum Ratings presented on this data sheet. Nor should the module be operated continuously at any of the specified maximum ratings. If the module is to be operated under any condition such that it may be subjected to one or more of the maximum rating conditions, care must be taken to monitor other parameters which may be affected. DECOUPLING Failure to properly decouple any of the voltage supply pins will result in oscillations at certain operating frequencies. Therefore, it is recommended that these pins be bypassed as indicated in the Module DC and Test Fixture Configuration drawing of this data sheet. MODULE MOUNTING To insure adequate thermal transfer from the module to the heatsink, it is recommended that a satisfactory thermal compound such as Dow Corning 340, Wakefield 120-2 or equivalent be applied between the module flange and the heatsink. The heatsink mounting surface under the module should be flat to within +/- 0.05 mm (+/- 0.002 inch). The module should be mounted to the heatsink using 3 mm (or 4-40) or equivalent screws torqued to 5-6 kg-cm (4-6 in-lb). The module leads are attached to the equipment PC board using 180C solder applied to the leads with a properly grounded soldering iron tip, not to exceed 195C, applied a minimum of 2 mm (0.080 inch) from the body of the module for a duration not to exceed 15 seconds per lead. It is imperative that no other portion of the module, other than the leads, be subjected to temperatures in excess of 100C (maximum storage temperature), for any period of time, as the plastic moulded cover, internal components and sealing adhesives may be adversely affected by such conditions. Due to the construction techniques and the materials used within the module, reflow soldering of the flange heatsink or the leads, is not recommended. THERMAL CONSIDERATIONS It will be necessary to provide a suitable heatsink in order to maintain the module flange temperature at or below the maximum case operating temperature. In a case where the module output power will be limited to +44.7 dBm (30W PEP) and designing for the worst case double-tone efficiency of 25%, the power dissipated by the module will be 48 watts. The heatsink must be designed such that the thermal rise will be less than the difference between the maximum ambient temperature at which the module will operate and the maximum operating case temperature of the module while dissipating 48 watts. At Tcase = +85C, V = 26v, IQ1 = 0.1A, IQ2 = 0.18A, IQ3 = 0.05A, I Q4 = 0.2A, Z L = 50 ohms and POUT = +44.7dBm PEP, maximum junction temperatures for the individual transistors should be below the following values: Q1 = Q2 = Q3 = Q4 = 115C 130C 125C 145C
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PACKAGE MECHANICAL DATA
UDCS No. 1010946 rev D
Informati on furni shed is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of thir d parties w hic h may result from its use. No lic ense is granted by impli cation or otherwise under any patent or patent rights of SGS-THOMSON Mi croelectr onics. Specificati ons mentioned i n this publication are subject to change without notice. T his publication supersedes and replaces all information pr eviously supplied. SGS-T HOMSON Mi croelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Mi croelectronics. (c)1997 SGS -T HOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Br azil - Canada - China - F rance - Germany - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherl ands - Singapor e - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. RF Products Division 141 Commerce Drive Montgomeryville, PA 18936 tel 215-361-6400 fax 215-362-1293
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